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| CE CHENYI ELECTRONICS FEATURES . The zener voltage are gaded accrding to the intermational E24 standard. Over voltage tolerance and higher zener voltage on request ZPD2.7 THRU ZPD51 0.5W SILICON PLANAR ZENER DIODES MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color band denotes cathode end .weight: Approx. 0.13 gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 Symbols Zener current see table "Characteristics" Power dissipation at TA=25 Junction temperature Storage temperature range Value ) Units Ptot TJ TSTG 500 175 1) mW -55 to +175 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25 Symbols Thermal resistance junction to ambient ) Min Typ Max 300 1) Units K/W R JA 1) Valid provided that a distance at 8mm from case are kept at ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE CHENYI ELECTRONICS ZPD2.7 THRU ZPD51 0.5W SILICON PLANAR ZENER DIODES ZDP2.7 THRU ZPD51 SILICON PLANAR ZENER DIODES Zener Voltage range 1) Dynamic resistance Temp. Coeff. Reverse Voltage at I=100nA Min. Admissible Zener Current of Tamb= 45 of Zener Volt Type Vznom IZT for VZT 2) rZjt and rZjk at IZK at Tamb= 25 IZ=5mA v ZPD2.7 ZPD3 ZPD3.3 ZPD3.6 ZPD3.9 ZPD4.3 ZPD4.7 ZPD5.1 ZPD5.6 ZPD6.2 ZPD6.8 ZPD7.5 ZPD8.2 ZPD9.1 ZPD10 ZPD11 ZPD12 ZPD13 ZPD15 ZPD16 ZPD18 ZPD20 ZPD22 ZPD24 ZPD27 ZPD30 ZPD33 ZPD36 ZPD39 ZPD43 ZPD47 ZPD51 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 5 mA V 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4.0...4.6 4.4...5.0 4.8...5.4 5.2...6.0 5.8...6.6 6.4...7.2 7.0...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 <90 <90 <100 <100 <100 <300 <700 <750 <750 <80 <250 <78 <60 <40 <10 <8 <7 <7 <10 <15 <20 <20 <25 <30 <40 <50 <50 <55 <220 <70 <70 <90 <110 <110 <170 <170 1 <50 <480 <400 <200 <150 <95 <500 <83 <50 mA VZ 10 /K -4 VR(V) IZmA 135 117 109 101 92 85 76 IZmA 160 140 130 120 110 100 90 80 70 64 58 53 47 43 40 36 32 29 27 24 21 20 18 16 14 13 12 11 10 9.2 8.5 7.8 -9...-4 -9...-3 -8...-3 -8...-3 -7...-3 -6...-1 -5...+2 -3...+4 -2...+6 -1...+7 +2...+7 +3...+7 +4...+7 +5...+8 +5...+8 +5...+9 +6...+9 +7...+9 +7...+9 +8...+9.5 +8...+9.5 +8...+10 +8...+10 +8...+10 +8...+10 +8...+10 +8...+10 +8...+10 +10...+12 +10...+12 +10...+12 +10...+12 0.8 1 2 3 5 6 7 7.5 8.5 9 10 11 12 13 15 16 18 20 22.5 25 27 29 32 35 38 67 59 54 49 44 40 36 33 30 28 25 23 20 18 17 16 13 12 10 9 9 8 7 6 6 NOTE 1)TESTED WITH PULSE Tp=20mS 2) Valid provided that electrodes are kept ambient temperature at a distance of 8mm from case Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE CHENYI ELECTRONICS ZPD2.7 THRU ZPD51 0.5W SILICON PLANAR ZENER DIODES ZPD2.7 THRU ZPD51 SILICON PLANAR POWER ZENER DIODES BREAKDOWN CHARACTERISITICS AT TJ=CONSTANT(PULSED) BREAKDOWN CHARACTERISITICS AT TJ=CONSTANT(PULSED) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3 |
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